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| Single Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 61/08 PSB 61/12 PSB 61/14 PSB 61/16 PSB 61/18 PSB 61 IdAVM VRRM = 65 A = 800-1800 V ~ ~ Symbol IdAVM IFSM Test Conditions TC = 100C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 65 1000 1100 900 1000 5000 5050 4050 4170 -40 ... + 150 150 -40 ... + 125 A A A A A A2 s A2 s A2 s A2 s C C C V V Nm g i2 dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Features * Package with fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) 2500 3000 2-2.5 100 Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM Characteristic Value 0.12 3 1.45 0.8 5 1.12 0.28 1.49 0.37 21 12.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 61 200 [A] 150 1.6 IF(OV) -----IFSM 10 IFSM (A) TVJ=45C 1000 TVJ=150C 900 4 2 As 1.4 100 1.2 TVJ=45C TVJ=150C 0 VRRM 1 50 IF 0 TVJ= 150C TVJ= 25C 0.8 1/2 VRRM 0.6 1 VRRM 10 0.5 1 VF[V] 1.5 2 0.4 10 0 10 1 t[ms] 10 2 10 3 3 1 2 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 95 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 200 [W] 175 150 125 100 75 50 25 PVTOT 0 PSB 61 80 [A] 60 DC sin.180 rec.120 rec.60 rec.30 0.34 0.22 0.47 = RTHCA [K/W] 100 105 110 0.72 115 120 40 1.22 125 130 135 DC sin.180 rec.120 rec.60 rec.30 20 IFAVM 40 60 0 [A] 20 IdAV 0 50 100 TC(C) 150 200 2.72 140 C Tamb 50 100 [K] 150 145 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 2 Z thJK Z thJC Fig.5 Maximum forward current at case temperature K/W 1.5 1 0.5 Zth 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated 0.01 POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions |
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